Thin-film transistors (TFTs) based on amorphous indium-gallium-zinc oxide (IGZO) with or without plasma fluorination treatment were fabricated and the sensitivity of their characteristics to hydrogen ...

Sputtered zinc oxide (ZnO) without intentional doping was thermally annealed and the dependence of its resistivity on different sample configurations and heat-treatment conditions was studied. The ZnO ...

Zinc−indium−tin oxide (ZITO) films are grown by pulsed-laser deposition in which 30% of the indium in the In2O3 structure is replaced by substitution with zinc and tin in equal molar proportions: ...

The gas sensor, based on a p–n heterojunction structure, was fabricated by vertically stacking a nanometer-thick layer of p-type cobalt phthalocyanine (CoPc) on a solution-processed n-type ...