Abstract: This letter presents a novel and compact structure that integrates silicon-carbide (SiC) Schottky diodes within a high-frequency transformer (HFT). The proposed structure would reduce the ...

Abstract: Conventional Schottky diodes have a switching limit of ideality factor larger than unity due to the thermionic emission. In this work, cold source diodes (CSDs) using cold metals of ...

Research and development on III-nitride semiconductors gained momentum much later than other conventional semiconductors such as silicon and gallium arsenide. This was due to the difficulty in ...

Here, active control of SPPs using monolithically fabricated Schottky diodes has been first designed and realized, achieving a continuous and significant modulation of transmission, reflection, and ...

Department of Department of Semiconductor Science and Technology, Jeonbuk National University, Jeonju 54896, Republic of Korea Research Institute for Materials and Energy Sciences, Jeonbuk National ...