Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

Abstract: The air-core inductance of power transformers is measured using a nonideal low-power rectifier. Its dc output serves to drive the transformer into deep saturation, and its ripple provides ...

Advanced Energy Industries, Inc. announced a new silicon-controlled rectifier (SCR) power controller for precision control of ...

Abstract: A new fabrication technique for passivated silicon Schottky barrier diodes is described. It is shown that the p-n junction guard ring or "hybrid" approach produces Schottky barriers whose ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...