A new device captures the energy of individual raindrops and converts it into direct current electricity, offering a compact ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical ...

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

However, the realisation of high-performance devices is often impeded by challenges at the metal/germanium interface, particularly the formation of Schottky barriers and issues arising from Fermi ...

Advanced Energy Industries, Inc. announced a new silicon-controlled rectifier (SCR) power controller for precision control of ...

Abstract: This letter reports an experimental demonstration of charge-balanced GaN super-heterojunction Schottky barrier diodes (SHJ-SBDs). Charge balance between the n-type delta-doping and the ...

Inflation is not a barrier to another cash rate cut as soon as the next Reserve Bank of Australia board meeting in July, as new figures showed price pressures remained within the central bank’s ...

However, conventional Si Schottky photodetectors, characterized by uniform Schottky barrier layers, exhibit restricted spectral response due to fixed barrier height constraints. In this work, we ...