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Compound Semiconductor4d
Debut for vertical rutile GeO₂ Schottky barrier diode
Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical rutile GeO 2 Schottky barrier diode (rutile GeO 2 is a tetragonal crystal ...
C&EN5d
Effect of Diameter Variation on Electrical Characteristics of Schottky Barrier Indium Arsenide Nanowire Field-Effect Transistors
Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be ...
C&EN14d
Toward h-BN/GaN Schottky Diodes: Spectroscopic Study on the Electronic Phenomena at the Interface
Department of Semiconductor Materials Engineering, Wrocław University of Science and Technology, Wyspiańskiego 27, Wrocław 50-370, Poland ...
IEEE23d
A Novel High Schottky Barrier Based Bilateral Gate and Assistant Gate Controlled Bidirectional Tunnel Field Effect Transistor
mathrm{ I}}_{\mathrm{ off}}$ ratio, compared to TFET, it can realize larger forward current. Besides the device symmetry, it’s more compatible with MOSFET technology. The function and influence of the ...
IEEE23d
Comments on “Effective Modulation of Ni Silicide Schottky Barrier Height Using Chlorine Ion Implantation and Segregation”
Abstract: Data claimed to support a barrier height between Cl-implanted Ni–Si and Si of as ... Using smaller contacts would provide increased sensitivity to the Schottky barrier heights between the ...