and that the excess noise normally found in passivated Schottky barrier diodes has been significantly reduced. The influence of metal barrier height and diffusion profile on the charge storage ...

Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical rutile GeO 2 Schottky barrier diode (rutile GeO 2 is a tetragonal crystal ...

Interestingly, while experimental and simulation data are consistent with a band gap increase for decreasing nanowire diameter, the experimentally determined Schottky barrier height is found to be ...

Abstract: We study the suppression of ambipolar behavior of Schottky-barrier MOSFETs using an interface engineering approach. Inserting a thin silicon nitride layer between the metallic source/drain ...