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RF and mmWave specialisr Filtronic has launched its latest V-band high-frequency amplifier system, Prometheus, at the ...
TagoreTech, a leading innovator in GaN-based RF and power solutions, today announced the release of the TSL8028N, a compact, high-performance receiver front-end module tailored for demanding wireless ...
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Zacks Investment Research on MSNHere's How Much a $1000 Investment in Heico Corporation Made 10 Years Ago Would Be Worth TodayNot only can it impact your investment portfolio, but it can also help you compare investment results across sectors and industries.Another thing that can drive investing is the fear of missing out, ...
Imec’s RF GaN-on-Si transistor achieves record efficiency and output power for an E-mode device, targeting high-efficiency 6G ...
This passive device lets you steer signal beams for over-the-air wireless test systems. Vaunix Technology, a manufacturer of ...
Researchers from the University of Bristol and Northrop Grumman Mission Systems discovered a latch-effect in gallium nitride ...
RFMW, a premier distributor of RF, microwave, and power components, is pleased to announce a new distribution agreement with ...
Improved contact resistance and RF output key toward mobile-compatible E-mode GaN-on-Si transistors. LEUVEN (Belgium), June 12, 2025 — Imec, ...
A high-efficiency power amp boosts data throughput and makes for more flexible payload architectures in power-constrained ...
Falcomm is proudly U.S.-based, and all products are fully designed and manufactured domestically, including products ...
Imec achieves record-breaking RF GaN-on-Si transistor performance for high-efficiency 6G power amplifiers Cross-sectional TEM image of the gate structure in imec’sGaN-on-silicon transistor. The image ...
Maxscend Microelectronics Co. (Maxscend) has secured a breakthrough in radio frequency (RF) filter technology, advancing ...
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