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Ruthenium with favorable resistivity scaling effects is a promising candidate for nanometer scale interconnects. An anisotropic transport phenomenon results in a predicted orientation dependence for ...
In a time when controlling thermal quantities governs the performance and yield of semiconductor devices, Sugirtha ...
In this paper, the effects of uncertainty in laser energy on temperature evolutions in the directed energy deposition (DED) process of M4 High-Speed Steel are quantified using a machine-learning (ML) ...
Mechanisms of atomic layer deposition (ALD) growth of lanthanum oxide on H-terminated Si(111) using lanthanum tris(N,N′-diisopropylacetamidinate) (La(iPr-MeAMD)3) are investigated using infrared (IR) ...