Infineon’s wafer technology has been qualified and integrated into its smart power stages, which are now being delivered to initial customers. As the ramp-up of ultra-thin wafer technology progresses, ...

A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first ...

Oct 29, 2024, Munich – 29 October 2024 – Infineon Technologies AG (FSE: IFX / OTCQX: IFNNY) announced it has unveiled an advance in handling and processing “the thinnest silicon power wafers ever ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 millimeters. The company said the newly produced wafers are half as ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN ...

Infineon said that it was committed to supporting its GaN customers and can scale capacity to meet their needs for reliable GaN power solutions. Infineon has become the first semiconductor ...

MUNICH, Germany — Infineon has developed a package technology that significantly broadens the application spectrum of wafer level ball grid array (WLB) packaging. The company has already licensed the ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 millimeters. The company said the newly produced wafers are half as thick as ...