Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Figure 5 PP Packages structure The Security Problem Definition (SPD) which includes the assets to be protected, the threats, policies and assumptions were developed in light of the collaboration ...

Abstract: The package structure critically influences the major characteristics of semiconductor lasers, such as thermal behavior, output power, wavelength, and far-field distribution. In this paper, ...

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