Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

7th generation Superjunction MOSFET The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100 ...

Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses ...

has announced the addition of the "Infineon EWLP Package Reverse Costing" report to their offering. The First Reverse Analysis Report of a Fan-out Wafer Level Package! This report is a reverse ...

Infineon Technologies has expanded its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The 62mm device is designed in half-bridge topology and is based on the ...

Infineon Technologies has announced the launch of its CoolSET System in Package (SiP). CoolSET System in Package (SiP) Credit: Infineon A compact, fully integrated system power controller for highly ...

Infineon also has hefty manufacturing capacity for its products, which may lead to a higher fixed-cost structure and may ... both admissions and sponsorship packages for our investment conferences ...

Infineon is developing TRENCHSTOP H7 IGBTs in a DTO247 package, which is twice the size of a standard TO247. A single high-current IGBT in a DTO247 can replace multiple lower-current TO247 IGBTs ...

Stellantis (STLA) and Infineon Technologies (IFNNY) announced they will work jointly on the power architecture for Stellantis’ electric vehicles to support Stellantis’ ambition of offering ...