Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Infineon’s CoolGaN 650-V integrated bidirectional switch is a simpler, higher-efficiency alternative to traditional ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon’s CoolGaN 650-V G5 bidirectional ... and replaces conventional back-to-back configurations. The GaN switch simplifies cycloconverter designs by enabling single-stage power conversion, ...

Power Amplifiers Market doc Growing 5G adoption and mobile usage are driving global demand for RF power amplifiers to boost signal clarity, ...