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Boise State University researchers have unveiled a cutting-edge approach to manufacturing flexible hybrid circuits—reducing ...
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Researchers from the University of Tokyo created a gate-all-around transistor made from gallium-doped indium oxide (InGaOx).
A new study in Small presents a 3D SiOx-embedded porous carbon nanofiber host that stabilizes lithium-metal batteries by ...
Institute of Materials Science and Engineering and Department of Mechanical Engineering and Materials Science, Washington University in St. Louis, St. Louis, Missouri 63130, United States ...