Research and development on III-nitride semiconductors gained momentum much later than other conventional semiconductors such as silicon and gallium arsenide. This was due to the difficulty in ...

Researchers at the University of Chicago Pritzker School of Molecular Engineering, including Assistant Professor Shuolong ...

BMW M has much to build upon with the M4 coupe and 'vert, including the use of its curved display, new exterior lighting, and ...

The 1,200-V RC-IGBT achieves higher performance by integrating IGBT and diode functions on a single die for even higher current density compared to separate IGBT and diode chipset solutions.