Abstract: Buffer-free growth of GaSb on GaAs using interfacial misfit (IMF) layers may significantly improve the performance of antimonide-based emitters operating between 1.6 and 3 mum by integrating ...

Abstract: Superluminescent diode with a selectively grown multiquantum-well layer is demonstrated. The device consists of an angled facet single-mode waveguide with a rear absorption region. High ...