Under the collaboration, Soitec will supply PSMC 300mm substrates incorporating a release layer, Transistor Layer Transfer ...

French MBE firm Riber has announced the sale of an MBE 412 research system to an Asian university institute. The university ...

The Fraunhofer IAF process simplifies the production with a MOEMS (micro-opto-electro-mechanical system) grating scanner in ...

TrendForce adds that while Renesas has reportedly decided to halt in-house production of SiC power chips, the company does ...

Sumitomo Electric and Osaka Metropolitan University have successfully fabricated a GaN-HEMT on a 2-inch polycrystalline ...

From June 10 to 12 at GreenTech 2025 in Amsterdam, Ams Osram will be exhibiting its latest-generation of LED and sensor ...

Ontario-based VueReal, the developer of MicroSolid Printing technology, has announced a partnership with ACA TMetrix, a ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

The project 'GENIE-RFIC: Generative ENgine for Intelligent and Expedited RFIC Design' will focus on GaN MMICs and CMOS RFICs.

Compared to standard SWIR LEDs, radiant power output of DOWA‘s SMD is higher by 46 percent at the 1,300 nm wavelength range ...

MmWave (30-100GHz) and sub-THz (100-300GHz) bands are seen as the future for next-generation RF systems including wireless ...

Within that family of ultrawide bandgap devices, AlN has generated significant attention for many years. Judged by various ...