A new 3D simulation tool developed by ETH and SLF researchers now allows for significantly more accurate predictions of ...

In this paper, the long-term avalanche energy withstanding ability of commercial 1.7-kV 4H-SiC MOSFETs in the process of bipolar degradation is systematically evaluated and analyzed. The test benches ...

Abstract: This paper investigates the effect of negative gate bias voltage (V gs) on the avalanche breakdown robustness of commercial state-of-the-art silicon carbide (SiC) power MOSFETs. The device's ...