Above approximately -20 dBm of input RF power, the diode’s transfer function deviates from linearity, transitioning into a different operational regime. Figure 2d illustrates the departure from square ...

Medium-voltage CoolGaN G5 transistors from Infineon include a built-in Schottky diode to minimize dead-time losses and enhance system efficiency. The integrated diode also streamlines power stage ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Abstract: The microwave wireless power transfer is a power transmission device that breaks ... the relationship between the electrical parameters of the schottky diode and the energy conversion ...

Abstract: A novel 4H-SiC junction barrier Schottky (JBS) with deep linear graded doping (DLGD ... The hardened device was tested under heavy ion irradiation with linear energy transfer (LET) up to ...

Diodes has released its first silicon carbide (SiC) Schottky barrier diodes, including 11 devices rated at 650 V and 8 devices rated at 1200 V. The 650-V DSCxxA065 series provides current ratings of 4 ...

The Schottky Diode is named after the German physicist ... Both the Schottky photodiode and the CCD transfer gate, which work with silicon technology, can be combined into a single device.

The low-voltage Schottky diode offers additional functionality on-chip ... GaN IC platform to a high level of maturity and offer it for prototyping and process transfer. The benefit of developing it ...

Traditionally, the Schottky diode equation is often used for characterization of I-V curve of metal/semiconductor contact. Thus researchers in the device community still blindly employ this “old” ...