Researchers from Kyoto Institute of Technology are claiming to have broken new ground by demonstrating the first vertical rutile GeO 2 Schottky barrier diode (rutile GeO 2 is a tetragonal crystal ...

A technical paper titled “Roadmap for Schottky barrier transistors” was published by researchers at University of Surrey, Namlab gGmbH, Forschungszentrum Jülich (FZJ), et al. “In this roadmap we ...

Santa Clara, CA and Kyoto, Japan, Nov. 12, 2024 (GLOBE NEWSWIRE) -- ROHM Semiconductor today announced new surface mount SiC Schottky barrier diodes (SBDs) that improve insulation resistance by ...

Abrupt step changes in barrier height dependences for chemically prepared Schottky diodes were observed after 1 ... according to Arrhenius equation. The Pt diffusion depth was estimated using the ...

This review overview the static and dynamic approaches for adjusting Schottky barrier height. Static approaches include metal and interface gap. Dynamic adjustment techniques for the SBH include ...

The review provides an overview of static and dynamic approaches for adjusting Schottky barrier height (SBH). Static approaches include metal selection and interface engineering. Dynamic adjustment ...

the electrical properties of Schottky barrier diodes with graphene/pentacene junctions and additional gates were investigated in detail. The results of modeling equations that considered the ideality ...

With increasing temperature, the on-off ratio increased from 10 6 to 10 8, the Schottky barrier height went up from 0.89 eV to 1.85 eV, and the ideality factor fell from 4.29 to 1.95. Reverse-bias ...

Measure current under varying voltages to extract Schottky barrier height and ideality factor using the Schottky diode equation. Capacitance-Voltage (C-V)_Measure capacitance with applied bias to ...

PLANO, Texas--(BUSINESS WIRE)--Diodes Incorporated (Diodes) (Nasdaq: DIOD) today announced the release of its first Silicon Carbide (SiC) Schottky barrier diodes (SBD). The portfolio includes the ...