It is found that the suppression of Schottky barrier height for holes results in an improvement of carrier injection velocity (vinj), attributable to the increased electrical field at the source edge.

Abstract: Data claimed to support a barrier height between Cl-implanted Ni–Si and Si of as ... Using smaller contacts would provide increased sensitivity to the Schottky barrier heights between the ...

The graded doping profile of the NW is manifested in monotonic increases in the channel and junction resistances and variation of the nature of the contacts from ohmic to Schottky of increasing ...

The structure can be modeled as being composed of two same Schottky barriers connected back to back, in series with a resistance of R. The devices are visible-blind and have great response even in mid ...