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IEEE7d
Chitosan-Based Electrolyte Gated Low Voltage Oxide Transistor With a Coplanar Modulatory Terminal
Abstract: Indium-zinc-oxide thin-film transistors (TFTs) using chitosan-based bio-polysaccharide electrolytes as the gate dielectric are fabricated. The TFTs show a good electrical performance with a ...
IEEE11d
On an InGaP/InGaAs Double Channel Pseudomorphic High Electron Mobility Transistor With Graded Triple
Abstract: An interesting InGaP/InGaAs double channel pseudomorphic high electron mobility transistor is fabricated and demonstrated. Due to the employed InGaP Schottky and buffer layers, InGaAs double ...
Modern Engineering Marvels on MSN14d
Silicon-Free Transistor Technology from China Promises Unprecedented Speed and Efficiency in Semiconductor Engineering
It is the fastest, most efficient transistor ever,” a Peking University statement claims. That is a confidence boost for a paradigm-shifting semiconductor technology breakthrough. The silicon-free two ...
C&EN26d
Investigating the Saturation Phenomenon of the Drain-Induced Barrier Lowering Effect on AlGaN/GaN High Electron Mobility Transistors with Schottky-Gate Structures
Article Views are the COUNTER-compliant sum of full text article downloads since November 2008 (both PDF and HTML) across all institutions and individuals. These metrics are regularly updated to ...