In a time when controlling thermal quantities governs the performance and yield of semiconductor devices, Sugirtha ...

TiN/HfOx/TiN resistive RAM (RRAM) devices have been fabricated where the hafnium oxide layer has been deposited at three different temperatures via atomic layer deposition (ALD). Material ...

Conformal atomic layer etching (cALE) of Si is realized on the basis of layer-by-layer self-limiting deposition and self-stop etching processes at low temperatures. In each cALE cycle, a conformal ...

The Taiwan Semiconductor Research Institute has made progress in developing chips capable of operating in temperatures as low as 4 Kelvin (minus-269°C), contributing to domestic quantum and aerospace ...

In this work, we studied the characteristics of Cu-Cu bonding with a ruthenium passivation layer at low temperatures. It is confirmed that the ruthenium passivation layer is effective in preventing ...

Control over the oxidation state and crystalline phase of thin-film iron oxides was achieved by low-temperature atomic layer deposition (ALD), utilizing a novel iron precursor, ...