News

EE World Online8h
GaN HEMT transistors target space applications with hermetically sealed packaging
Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...
Compound Semiconductor21h
Infineon launches rad-hard GaN HEMTs
Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...