Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses ...

7th generation Superjunction MOSFET The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100 ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Infineon Technologies has announced the launch of its CoolSET System in Package (SiP). CoolSET System in Package (SiP) Credit: Infineon A compact, fully integrated system power controller for highly ...

The source-down mosfet is on the right, and the more conventional device on the left. According to Infineon: The source-down package (1) is externally the same as the (2) conventional drain-down 3.3 x ...

Infineon is developing TRENCHSTOP H7 IGBTs in a DTO247 package, which is twice the size of a standard TO247. A single high-current IGBT in a DTO247 can replace multiple lower-current TO247 IGBTs ...

Infineon Technologies has expanded its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The 62mm device is designed in half-bridge topology and is based on the ...

Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

Infineon has come up with a dedicated production process targeting a flip-chip package for voltage regulators, and it’s aligned with the quality requirements of the automotive market.