Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.

"In-Depth Analysis of the Market for Semiconductor Devices for High-Temperature Applications: Highlighting Segmentation by Material, Device Type, Operating Temperature, and Industry, Offering ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Germany’s Infineon Technologies wants a crack at ... in India will use materials such as silicon carbide and gallium nitride, which offer greater heat resistance and provide more power density ...

Recently, Infineon unveiled the world’s first 300 mm power gallium nitride (GaN) wafer technology in an existing high-volume manufacturing environment – a significant step towards delivering ...

and gallium nitride (GaN), which are more relevant at high voltages when compared to silicon (Si). Infineon has also revealed what it called the world’s first 300-mm power wafer based on GaN.

The announcement comes less than two months after the German chipmaker announced it had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. In a statement, Infineon said ...

Infineon has unveiled the world’s thinnest ... had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. In a statement, Infineon said the silicon power wafers ...