Infineon’s CoolGaN 650-V integrated bidirectional switch is a simpler, higher-efficiency alternative to traditional ...

A pair of half-bridge drivers from STMicroelectronics help designers deliver improved efficiency, power density, and ...

Imec researchers have set a new benchmark in RF transistor performance for mobile applications. They present a gallium ...

Qualcomm to buy Alphawave; reworking chip grants; global semi, equipment sales up; GF's $16B expansion; Arm's AI-defined ...

"In-Depth Analysis of the Market for Semiconductor Devices for High-Temperature Applications: Highlighting Segmentation by Material, Device Type, Operating Temperature, and Industry, Offering ...

Abstract: Wide band-gap gallium nitride (GaN) device has the advantages of large band-gap, high electron mobility and low dielectric constant. Compared with traditional Si devices, these advantages ...

Abstract: In this paper, measurements and characterization results of several micromechanical bulk-mode resonators and filters fabricated from single crystalline gallium nitride are presented. A 167.6 ...

Explore next-gen transistor, from InGaOx GAA structures to Intel’s RibbonFET, unlocking higher density, efficiency, and performance.