Recent patent filings emphasise critical aspects of power GaN technology such as gate design and packaging, resulting in ...

GaN-on-SiC epitaxial wafer company SweGaN has appointed Pontus de Laval, senior advisor at one of SweGaN’s major shareholders ...

Wondering what a GaN charger is? Learn how it works, why it’s faster and smaller, and how to tell if your charger uses GaN ...

Infineon’s CoolGaN 650-V integrated bidirectional switch is a simpler, higher-efficiency alternative to traditional ...

Qualcomm to buy AlphaWave; reworking chip grants; global semi, equipment sales up; GF's $16B expansion; Arm's AI-defined ...

The NP12-1B technology provides 28-volt operation with superior linearity, power density and efficiency for demanding high-power applications across K-Band to V-Band frequencies ...

Third-generation semiconductor GaN-on-SiC has emerged as a critical battleground in the US-China technology rivalry, with ...

Smart glasses with augmented reality functions look more natural than VR goggles, but today they are heavily reliant on a ...

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...