Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

Infineon Technologies AG announced the first of a new family of radiation-hardened Gallium Nitride (GaN) transistors, ...

Infineon estimates that data centers could ... These trends position SiC and GaN power devices as practical complements to silicon in the design of dense, efficient, and thermally optimized ...

These devices will include greater power density, efficiency and thermal performance ... Future Visteon EV powertrain applications incorporating Infineon CoolGaN (Gallium Nitride) and CoolSiC (Silicon ...

Power Amplifiers Market doc Growing 5G adoption and mobile usage are driving global demand for RF power amplifiers to boost signal clarity, ...

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...