Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

GaN manufacturing processes also improves that device performance resulting ... As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

State-of-the art GaN manufacturing processes lead to improved device performance ... innovation leader in GaN and power systems," said Jochen Hanebeck, CEO of Infineon Technologies AG.

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Infineon has launched the CoolGaN Drive family, featuring single switches and half-bridges with integrated drivers for compact, efficient designs. The family includes CoolGaN Drive 700-V G5 single ...

After setting fundamental and harmonic impedance to power-added-efficiency matching conditions, Ohki and co-workers ...

These devices will include greater power density, efficiency and thermal performance ... Future Visteon EV powertrain applications incorporating Infineon CoolGaN (Gallium Nitride) and CoolSiC (Silicon ...