Etching technology for memory device fabrication is discussed in this paper. Both of 3D-NAND and DRAM need high-aspect ratio (HAR) etching, and narrow pitch patterning is needed to continue DRAM ...

Poly line and poly LEC (line end cut) formed during the second Litho etch process. It is great challenge to get appropriate LEC CD (Critical Dimension), meanwhile balance LEC position to achieve ...