In this paper, we propose a double diode network including an additional stacked diode, which provides robustness against Electrostatic discharge (ESD) and high-frequency interference signals. The ...

Compared to conventional SiC-JFET/Si-mosfet cascode devices, the SiC-JFET/GaN-HEMT cascode device exhibits fast switching speed, which has been validated by systematic characterizations including ...