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we propose an integrated gate driver to specially limit the peak negative gate voltage of SiC MOSFETs introduced by the crosstalk phenomenon and the reliable short-circuit protection. A simple ...

Dramatic performance enhancement relative to unstrained devices are reported. These transistors have gate length of 45nm and 50nm for NMOS and PMOS respectively, 1.2nm physical gate oxide and Ni ...

This repository contains the implementation and simulation of dual-output logic gates (AND/NAND, OR/NOR, XOR/XNOR) using Complementary Pass Transistor Logic (CPL) in LTSpice. Developed as part of the ...