Research and development on III-nitride semiconductors gained momentum much later than other conventional semiconductors such as silicon and gallium arsenide. This was due to the difficulty in ...

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Abstract: In this work, we present an in-depth analysis of a Ho 3+-doped ZrF 4 fiber laser operating at 1.2 μm, pumped using a 640 nm laser diode. First, we present spectroscopic studies on fiber ...

Abstract: We report on a diode-pumped Er:Yb laser able to generate a single-frequency output power in excess of 200 mW at both 1.53 μm and 1.56 μm and over 300 mW in multimode operation. The tuning ...

Here, we have demonstrated the current rectification switching in TMDC vertical diodes using a liquid metal (EGaIn) top electrode with a reconfigurable contact area. The rectification switching is ...

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