A technical paper titled “Analysis of Logic-in-Memory Full Adder Circuit With Floating Gate Field Effect Transistor (FGFET)” was published by researchers at Konkuk University, Korea National ...
Key TakeawaysBerkeley Lab scientists showed a novel way to build advanced transistors decades before similar structures ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
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Innovative transistor design offering advantages for controlling and reading quantum chips
The smaller electronic components become, the more complex their manufacture becomes. This has been a major problem for the chip industry for years. At TU Wien, researchers have now succeeded for the ...
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