using formamidinium lead iodide (FAPbI 3) perovskite. "The engineering of tin halide perovskites has led to the development of p-type transistors with field-effect mobilities of over 70 cm 2 V − ...

The researchers used a hole-transporting material made of phenethylammonium iodide (PEAI ... also reduced the defect density associated with tin oxidation to a level unprecedented for tin-lead ...