Sunnyvale, CA — Aeroflex/Metelics has released a family of surface mount GaAs and silicon Schottky mixer/detector diodes for high volume pick and place applications. These control devices are ...

THz Schottky diode mixers are based on metal/GaAs interfaces; the GaAs layer must be highly doped (up to 10 18 cm −3) and the contact area must be less than 1 μm 2 in size 5.

Conveniently, a widely used terahertz mixer is the Schottky diode, which in its simplest form is just a metal/semiconductor interface. Figure 1: Design and image of the monolithically integrated ...

Figure 1 shows a graphical representation of the rat-race mixer under consideration. It uses two Schottky beam-lead diodes (Agilent HSCH-9101) connected to a hybrid ring. The RF, LO and diode ...

Jan. 29, 2025 (GLOBE NEWSWIRE) -- Vishay Intertechnology, Inc. (NYSE: VSH) today introduced 16 new 650 V and 1200 V silicon carbide (SiC) Schottky diodes in the industry-standard SOT-227 package.

announced today that its proprietary super-low-barrier Terahertz mixer diode MMIC foundry process will now be offered to address the millimeter-wave transceiver applications that require low LO drive.

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...