The I-V measurement was carried out using HP4145 (semiconductor ... contacts to n-& p-type 4H-SiC” Solid-State Electronics, 44 (2000) 1179-1186. 2. C. Kim, J.H. Lee, S.M. Choi, N.I. Cho, C. Hong and G ...

A technical paper titled “Diamond p-Type Lateral Schottky Barrier Diodes With High Breakdown Voltage (4612 V at 0.01 mA/Mm)” was published by researchers at University of Illinois at Urbana–Champaign.

This second course provides a more detailed description of high-voltage Schottky and p-n diodes, starting with the semiconductor physics background needed to analyze both types of diodes. The main ...