A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first ...

Infineon has unveiled the world’s thinnest silicon power wafers, with a thickness of 20 micrometers and a diameter of 300 millimeters. The company said the newly produced wafers are half as ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN ...

Infineon Technologies AG announced it has unveiled an advance in handling and processing "the thinnest silicon power wafers ever manufactured," with a thickness of 20 micrometers and a diameter of 300 ...

Infineon Technologies has announced that its scalable GaN manufacturing on 300-millimeter wafers roadmap is on track.

The big picture: Infineon has developed the world's thinnest silicon power wafers, measuring just 20 micrometers in thickness – about the same as a human hair. These wafers promise significant ...

Infineon Technologies (OTCQX:IFNNY) on Wednesday said it is looking to grab a share of the growing gallium nitride (GaN) market with the development of a new technology, that could help in ...

Infineon’s existing silicon production infrastructure in Villach, Austria, has been key to the successful development of this 300 mm GaN wafer technology.

Infineon has unveiled the thinnest silicon power wafers ever manufactured, with a thickness of only 20 micrometers, in a high-scale semiconductor fab.

(RTTNews) - German semiconductor maker Infineon Technologies AG (IFNNY) announced Wednesday the development of the world's first 300 mm power gallium nitride or GaN wafer technology. The ...