Infineon has introduced Q-DPAK and TOLL package options to its lineup of 650-V CoolSiC Generation 2 (G2) MOSFETs. Leveraging G2 technology, these devices enable faster switching and lower power losses ...

7th generation Superjunction MOSFET The CoolMOS C7 from Infineon is the 7th generation high-voltage Superjunction structure power MOSFET. With a breakdown voltage of 650V for a current of 7A (100 ...

The CooliR²Die innovative power module from Infineon is an IGBT module for automotive ... innovative gels and masks). This package has no wire bonding to reduce the inductance and no PCB to ...

Infineon Technologies has announced the launch of its CoolSET System in Package (SiP). CoolSET System in Package (SiP) Credit: Infineon A compact, fully integrated system power controller for highly ...

Infineon’s 650-V G5 bidirectional switch integrates two switches in a single device to actively block current and voltage in ...

The source-down mosfet is on the right, and the more conventional device on the left. According to Infineon: The source-down package (1) is externally the same as the (2) conventional drain-down 3.3 x ...

Infineon is sampling an IGBT package which can hold an IGBT up to 120A and a full rated diode in the same footprint and pin-out as JEDEC standard TO-247-3. Volume production is planned for Q1 2015.

Infineon Technologies has expanded its CoolSiC 1200 V and 2000 V MOSFET module families with a new industry-standard package. The 62mm device is designed in half-bridge topology and is based on the ...

The European Commission (EC) has approved a €920 million ($964m) funding package to support the construction of Infineon’s new chip fab in Dresden, Germany. The funding will allow the German ...