A Germany-based global semiconductor leader has developed the the world’s first 300 mm power gallium nitride (GaN) wafer technology. Infineon Technologies claims that the company is first ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN-based ...

The announcement comes less than two months after the German chipmaker announced it had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. In a statement, Infineon said ...

Infineon Austria has succeeded in producing 300-millimeter gallium nitride wafers on an integrated pilot line in the existing 300-millimeter silicon production facility at its fab in Villach ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

Coupled with its silicon, silicon carbide, and gallium nitride portfolios, the ultra-thin wafers position Infineon at the forefront of key decarbonization and digitalization technologies.

The German semiconductor maker has developed the world’s first 300 mm power GaN wafer technology ... silicon carbide and gallium nitride. Infineon said it will further scale GaN capacity ...

German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN ...

Infineon has unveiled the world’s thinnest ... had successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. In a statement, Infineon said the silicon power wafers ...