German chipmaker Infineon has successfully developed the world’s first 300mm power gallium nitride (GaN) wafers. The company said that the breakthrough will help to boost the market for GaN ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is ...

The German semiconductor maker has developed the world’s first 300 mm power GaN wafer technology ... silicon carbide and gallium nitride. Infineon said it will further scale GaN capacity ...

After announcing the world’s first 300-millimeter gallium nitride (GaN) power wafer and opening the world’s largest 200-millimeter silicon carbide (SiC) power fab in Kulim, Malaysia, Infineon ...

Infineon Technologies AG announced a breakthrough ... it has successfully developed 300 millimeter (12 inch) gallium nitride wafers, which can produce 2.3 times more chips than 200 millimeter ...

Infineon Technologies AG (FSE: IFX) (OTCQX: IFNNY) today announced that the company has succeeded in developing the world's first 300 mm power gallium nitride (GaN) wafer technology. Infineon is the ...