Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

GaN manufacturing processes also improves that device performance resulting ... As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its CoolGaN technology. The company said the in-house manufactured transistors ...

State-of-the art GaN manufacturing processes lead to improved device performance ... innovation leader in GaN and power systems," said Jochen Hanebeck, CEO of Infineon Technologies AG.

The new radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications needed in on-orbit space vehicles, manned space exploration, and ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

Infineon has launched the CoolGaN Drive family, featuring single switches and half-bridges with integrated drivers for compact, efficient designs. The family includes CoolGaN Drive 700-V G5 single ...

These devices will include greater power density, efficiency and thermal performance ... Future Visteon EV powertrain applications incorporating Infineon CoolGaN (Gallium Nitride) and CoolSiC (Silicon ...