GaN manufacturing processes also improves that device performance resulting ... As a leader in power systems, Infineon is mastering all three relevant materials: silicon, silicon carbide and ...

Integrating the Schottky diode into GaN transistor helps boost power-system efficiency by reducing dead-time losses.

State-of-the art GaN manufacturing processes lead to improved device performance ... innovation leader in GaN and power systems," said Jochen Hanebeck, CEO of Infineon Technologies AG.

State-of-the art GaN manufacturing processes are helping to lead to improved device performance delivering benefits ... a leader in the fast-growing GaN market. As a leader in power systems, Infineon ...

The third device, screened to 500 krad TID, is qualified to the rigorous JANS Specification MIL-PRF-19500/794. Infineon is the first company in the industry to achieve the DLA JANS certification for ...

To address this, Infineon has developed a range of hybrid power supply unit (PSU) solutions that combine silicon (Si), silicon carbide (SiC), and gallium nitride (GaN) technologies to achieve not only ...

Infineon Technologies AG today announced the first of a new family of radiation hardened Gallium Nitride (GaN) transistors, fabricated at Infineon’s own foundry, based on its proven CoolGan technology ...

The devices complement Infineon’s legacy radiation hardened silicon MOSFET portfolio, providing customers with access to a full catalogue of power solutions for space applications. The first three ...