Infineon introduces rad-hard GaN transistors, including one of the first DLA JANs-certified GaN devices, for space applications.

Infineon Technologies AG has introduced a new series of radiation hardened gallium nitride (GaN) transistors based on its ...

Radiation-hardened GaN High Electron Mobility Transistor (HEMT) devices are engineered for mission-critical applications ...

Infineon has announced the first of a new family of radiation hardened GaN HEMTs, fabricated at Infineon’s own foundry, based ...

DLA's top space grade for homebrew transistors Infineon has rolled out its first in-house radiation-hardened gallium nitride ...

Gallium nitride (GaN) transistors have radiation tolerance that makes them a good fit for a growing variety of space industry ...

The new power systems will be based on 800V HVDC to enhance energy-efficient power distribution at the data centres.

Thermal design has become a first-order constraint in GaN system performance. As GaN pushes deeper into high-power, ...

These devices will include greater power density, efficiency and thermal performance ... Future Visteon EV powertrain applications incorporating Infineon CoolGaN (Gallium Nitride) and CoolSiC (Silicon ...