High performance switching expert has been an innovator in high voltage reed relays for more than half a century ...

SemiQ’s 1,200-V third-generation SiC MOSFET, in a smaller footprint, reduces switching losses in high power applications.

The team from Wisconsin-Madison claims to be the first to break the 2 kV barrier for monolithic bidirectional GaN HEMTs, with ...

As you might have noticed, it’s easiest to use P-FETs for high-side switching and N-FETs for low-side switching – as long as your Vgs is smaller than your power rail voltage, you don’t have ...

Thanks to a combination of high-speed and low-loss switching, GaN high electron mobility transistors are able to excel in ...

PSpice introduces innovations transforming civic life and business sectors, yet a simulation software switch must first be ...

A 650-V bi-directional GaN IC combined with a high-speed isolated gate driver facilitates this single-stage power conversion.

Keysight Technologies, Inc. (NYSE: KEYS) has developed an optically isolated differential probing family dedicated to enhancing efficiency and perform ...

Bi-Directional GaNFast™ plus new IsoFast™ drivers enable advanced ‘single-stage’ topologies to further enhance efficiency, ...

--(BUSINESS WIRE)--Kinetic Technologies, a leader in power management solutions, expands its portfolio with the introduction of the KTS1800, a high-performance USB VBUS safety management load ...