Dickerson noted the company’s leadership in device architecture inflections such as gate-all-around transistors, backside power delivery, and advanced packaging, which are driving growth ...
The semiconductor industry is making its first major change in a new transistor type in more than a decade, moving toward a next-generation structure called gate-all-around (GAA) FETs. Although GAA ...
A new technical paper titled “First Demonstration of High-Performance and Extremely Stable W-Doped In 2 O 3 Gate-All-Around (GAA) Nanosheet FET” was published by researchers at Georgia Institute of ...
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