The four-layer diode was the key to William Shockley's plan to revolutionize AT&T's phone system. It was a great device in theory, but not in practice -- at least not at the time when Shockley ...

Were you to bias an n-channel JFET as you would a bipolar transistor with a positive bias on its gate, the diode between gate and source would conduct, and the transistor would remain a diode with ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. The product family of medium-voltage CoolGaN ...

For hard-switched power topologies, Infineon is planning a 100V GaN transistors with a integrated Schottky diode. “Due to the lack of body diode in hard-switching applications, GaN-based topologies ...

Infineon Technologies has introduced the world’s first gallium nitride (GaN) power transistors with integrated Schottky diode for industrial use. CoolGaN Transistors G5 with integrated Schottky diode ...