BOISE, Idaho, Dec. 10, 2013 (GLOBE NEWSWIRE) -- Micron Technology, Inc. (MU), today announced the availability of 45nm Serial NOR Flash memory samples in 512Mb, 1Gb, and 2Gb densities with a ...

High Extinction Ratio Infrared Polarisers made from ZnSe, BaF2, CaF2, KRS-5 and polyethylene materials by holographic or mechanial ruling techniques for applications from 1-250 microns. High ...

Production at World’s First Memory Fab to Earn IATF Certification for Quality BOISE, Idaho and MUNICH, Germany, Nov. 13, 2018 (GLOBE NEWSWIRE) -- At Electronica 2018, Micron Technology, Inc ...

Boise, Idaho-based memory leader Micron Technology Inc. opened its expanded 264,778-square foot facility in Singapore for assembling and testing high-density, high-speed memory components and modules, ...

176-layer TLC NAND flash from Micron will enable higher density, higher performance NAND flash for SSDs and other applications. Initially available in the company’s consumer Crucial SSD products ...

BOISE, USA: Micron Technology, Inc. announced the availability of 45nm Serial NOR Flash memory samples in 512Mb, 1Gb, and 2Gb densities with a standard SPI interface. These new MT25Q SPI NOR ...